Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2014/129404
Kind Code:
A1
Abstract:
This semiconductor device comprises: a gate electrode which is embedded in a gate trench in a semiconductor layer of a first conductivity type; a source region of the first conductivity type, a channel region of a second conductivity type and a drain region of the first conductivity type, which are formed in the semiconductor layer; a second trench which is selectively formed in a source portion that is divided in the surface of the semiconductor layer so as to contain the source region; a trench embedded portion which is embedded in the second trench; a channel contact region of the second conductivity type, which is selectively arranged in the source portion at a position higher than the bottom of the second trench, and which is electrically connected to the channel region; and a surface metal layer which is arranged on the source portion and is electrically connected to the source region and the channel contact region.
More Like This:
Inventors:
NAKANO YUKI (JP)
Application Number:
PCT/JP2014/053511
Publication Date:
August 28, 2014
Filing Date:
February 14, 2014
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12
Foreign References:
| JP2012178536A | 2012-09-13 | |||
| JP2004055968A | 2004-02-19 | |||
| JP2004022941A | 2004-01-22 | |||
| JP2002353456A | 2002-12-06 |
Attorney, Agent or Firm:
INAOKA, Kosaku et al. (JP)
Kosaku Inaoka (JP)
Kosaku Inaoka (JP)
Download PDF: