SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

Title:

SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2016/129230

Kind Code:

A1

Abstract:

A method for manufacturing a semiconductor device comprises readying a first substrate (10), forming on one surface (10a) of the first substrate a metal film having a Ti layer (40b) as the outermost surface, patterning the metal film to form a first pad part (17), readying a second substrate (20), forming on one surface (20a) of the second substrate a metal film having a Ti layer (41b) as the outermost surface, patterning the metal film to form a second pad part (24), vacuum annealing the first substrate and the second substrate to remove an oxide film formed on the Ti layer in the first pad part and the second pad part, and joining the first pad part and the second pad part.

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Inventors:

TAKAHATA TOSHIHIKO (JP)
TAKETANI EIICHI (JP)

Application Number:

PCT/JP2016/000480

Publication Date:

August 18, 2016

Filing Date:

February 01, 2016

Export Citation:

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Assignee:

DENSO CORP (JP)

International Classes:

G01P15/08; H01L23/02; H01L23/26; H01L29/84

Foreign References:

JP2014060699A	2014-04-03
JP2013228256A	2013-11-07
US20100258950A1	2010-10-14
JP2010127710A	2010-06-10
US20090321867A1	2009-12-31
JP2006242898A	2006-09-14
JP2002359313A	2002-12-13

Attorney, Agent or Firm:

KIN, Junhi (JP)
Gold Junki (JP)

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