Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/037705
Kind Code:
A1
Abstract:
This semiconductor device has: an n conductivity type first semiconductor layer that is formed of a gallium nitride semiconductor; a p conductivity type second semiconductor layer, which is laminated directly on the first semiconductor layer, and which is formed of a gallium nitride semiconductor, to which a p type impurity is added to a concentration of 1×1020cm-3 or higher; a first electrode that is disposed so as to be in contact with the first semiconductor layer; and a second electrode that is disposed so as to be in contact with the second semiconductor layer. The semiconductor device functions as a pn junction diode.
Inventors:
MISHIMA TOMOYOSHI (JP)
HORIKIRI FUMIMASA (JP)
HORIKIRI FUMIMASA (JP)
Application Number:
PCT/JP2017/023554
Publication Date:
March 01, 2018
Filing Date:
June 27, 2017
Export Citation:
Assignee:
UNIV HOSEI (JP)
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
H01L29/861; C23C16/34; H01L21/20; H01L21/205; H01L21/329; H01L29/06; H01L29/47; H01L29/868; H01L29/872; H01L33/32
Foreign References:
| JP2014013886A | 2014-01-23 | |||
| JP2016025264A | 2016-02-08 | |||
| JP2016143780A | 2016-08-08 | |||
| US4982260A | 1991-01-01 | |||
| JP2002319685A | 2002-10-31 | |||
| JP2010040698A | 2010-02-18 | |||
| JP2013149914A | 2013-08-01 |
Other References:
See also references of EP 3506369A4
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
Download PDF: