Title:
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/055704
Kind Code:
A1
Abstract:
The semiconductor device according to an embodiment includes a laminate, a first insulating layer, first and second step parts 2, and a second insulating layer 46. The laminate includes a first electrode layer 41 (WLDD) and a second electrode layer 41 (SGD). The first and second step parts 2 are provided to a first end-section region 101 and a second end-section region 102. The second insulating layer 46 extends in the X-direction. The second insulating layer divides the second electrode layer 41 (SGD) along the X-direction. The length L1 of the second insulating layer 46 along the X-direction is greater than the length L2 of the second electrode layer 41 (SGD) along the X-direction and less than the length L3 of the first electrode layer 41 (WLDD) along the X-direction.
More Like This:
Inventors:
SAKAMOTO WATARU (JP)
NAKAKI HIROSHI (JP)
ISHIHARA HANAE (JP)
NAKAKI HIROSHI (JP)
ISHIHARA HANAE (JP)
Application Number:
PCT/JP2016/077889
Publication Date:
March 29, 2018
Filing Date:
September 21, 2016
Export Citation:
Assignee:
TOSHIBA MEMORY CORP (JP)
International Classes:
H01L21/336; H01L29/788; H01L29/792
Foreign References:
| JP2008171918A | 2008-07-24 | |||
| JP2007334974A | 2007-12-27 | |||
| JP2012069695A | 2012-04-05 | |||
| US20110092038A1 | 2011-04-21 | |||
| JP2012119013A | 2012-06-21 | |||
| JP2010192569A | 2010-09-02 | |||
| JP2011171735A | 2011-09-01 |
Attorney, Agent or Firm:
HYUGAJI, Masahiko (JP)
Download PDF: