SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2018/074146

A1

[Problem] To provide a structure which enables the use of a Zn alloy-based solder by an industrially simple technique, and which can maintain electro-mechanical bonding characteristics even after experiencing repeated large temperature changes. [Solution] A metal electrode 5d on a semiconductor chip 4 and a metal plate 1d are bonded using a Zn-Al-based alloy solder plate by implementing: a semiconductor chip bonding step in which, in order to avoid a corner portion of the semiconductor chip at which stress is concentrated in use, crushing and bonding, by ultrasonic bonding method, a metal oxide coating film 3d present on a surface of the solder plate only in a rectangular area with rounded corners; a metal plate bonding step in which the other main surface of the solder plate is opposed to the metal plate, and the metal oxide coating film is crushed and bonded in an intended area similarly by ultrasonic bonding method; and an alloy forming step in which the Zn-Al-based alloy is melted by heating, and a robust alloy area is formed in the first bonding area and the second bonding area, whereby a side surface is formed in a curved shape resistant to stress due to the presence of an oxide coating film.

TANISAWA HIDEKAZU (JP)
KATO FUMIKI (JP)
TAKAHASHI HIROKI (JP)
KOUI KENICHI (JP)
SATO HIROSHI (JP)
SATO SHINJI (JP)
MURAKAMI YOSHINORI (JP)

PCT/JP2017/034445

April 26, 2018

September 25, 2017

Click for automatic bibliography generation  

AIST (JP)

H01L21/52; B23K1/00; B23K1/06

JP2009113050A	2009-05-28
JP2016225552A	2016-12-28

ITOH, Atsushi (JP)

View/Download PDF      PDF Help

Previous Patent: HEARTBEAT DETECTING METHOD AND HEARTBEAT DETECTING DEVICE

Next Patent: LIGHTING DEVICE FOR VEHICLE