Title:
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SAME, AND SENSOR
Document Type and Number:
WIPO Patent Application WO/2018/110093
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device comprising an epitaxial layer formed on a SiC substrate, and a CMOS formed in the top part of the epitaxial layer, wherein growth of any defects present at the interface between the SiC substrate and the epitaxial layer is suppressed, and the reliability of the semiconductor device is improved. As a means to achieve the foregoing, a semiconductor device is formed such that the distance from a p-type diffusion layer to the interface between an n-type epitaxial layer and an n-type semiconductor substrate is larger than the thickness of a depletion layer that extends from the p-type diffusion layer to the back side of the n-type semiconductor substrate in response to the potential difference between a substrate electrode and another substrate electrode.
Inventors:
MASUNAGA MASAHIRO (JP)
SATO SHINTAROH (JP)
SHIMA AKIO (JP)
HISAMOTO DIGH (JP)
SATO SHINTAROH (JP)
SHIMA AKIO (JP)
HISAMOTO DIGH (JP)
Application Number:
PCT/JP2017/038383
Publication Date:
June 21, 2018
Filing Date:
October 24, 2017
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L21/8238; H01L21/336; H01L21/822; H01L27/04; H01L27/088; H01L27/092; H01L29/78
Foreign References:
| JP2000508477A | 2000-07-04 | |||
| JP2005519778A | 2005-07-07 | |||
| JP2014203991A | 2014-10-27 | |||
| JP2002009283A | 2002-01-11 | |||
| JPH1098371A | 1998-04-14 |
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
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