SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME, AND POWER CONVERSION DEVICE

WIPO Patent Application WO/2018/185974

A1

Provided are: a semiconductor device with which a residue of very small air bubbles generated during a resin injection step is suppressed, and it is possible to easily achieve the flow of sealing material into regions to be sealed with resin; a method for manufacturing the semiconductor device, and a power conversion device having such a semiconductor device. A semiconductor device (101) comprises an insulating substrate (2), a semiconductor element (4), a conductor substrate (3P), and a case material (1). The semiconductor element (4) is connected above the insulating substrate (2), and the conductor substrate (3P) is connected above the semiconductor element (4). The case material (1) encloses so as to surround the region in which the insulating substrate (2), the semiconductor element (4), and the conductor substrate (3P) overlap in plan view. A plurality of metal patterns (2P) are disposed on the main surface of an insulating layer (2D). A groove (2G) is formed between a pair of adjacent metal patterns (2P) among the plurality of metal patterns (2P). A through hole (7) is formed in a position on the conductor substrate (3P) overlapping with the groove (2G) in plan view.

JPS60163751	[Title of the device] Semiconductor device
JP2012182350	MODULE COMPONENT AND MANUFACTURING METHOD OF THE SAME
JPH077122	IC PACKAGE

KAJI YUSUKE (JP)
ROKUBUICHI HODAKA (JP)
KONDO SATOSHI (JP)

PCT/JP2017/043784

October 11, 2018

December 06, 2017

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MITSUBISHI ELECTRIC CORP (JP)

H01L23/28; H01L25/07; H01L25/18; H02M7/48

JP2014154679A	2014-08-25
JP2015046416A	2015-03-12
JP2009064852A	2009-03-26

FUKAMI PATENT OFFICE, P.C. (JP)

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