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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/116748
Kind Code:
A1
Abstract:
Provided is a semiconductor device wherein a transistor section and a diode section have excellent conduction characteristics. This semiconductor device having a transistor section and a diode section is provided with: a first conductivity-type drift region that is provided as a part of a semiconductor substrate; a second conductivity-type first well region that is provided on the upper surface side of the semiconductor substrate; a second conductivity-type anode region that is provided on the semiconductor substrate upper surface side in the diode section; and a second conductivity-type first high-concentration region, which is provided between the anode region and the first well region by being in contact with the first well region, and which has a doping concentration that is higher than that in the anode region.

Inventors:
MITSUZUKA Kaname (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-sh, Kanagawa 30, 〒2109530, JP)
TAKAHASHI Misaki (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-sh, Kanagawa 30, 〒2109530, JP)
SHIRAKAWA Tohru (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-sh, Kanagawa 30, 〒2109530, JP)
Application Number:
JP2018/039786
Publication Date:
June 20, 2019
Filing Date:
October 25, 2018
Export Citation:
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Assignee:
FUJI ELECTRIC CO., LTD. (1-1 Tanabeshinden, Kawasaki-ku Kawasaki-sh, Kanagawa 30, 〒2109530, JP)
International Classes:
H01L29/78; H01L21/336; H01L21/76; H01L21/8234; H01L27/06; H01L29/739
Domestic Patent References:
WO2016030966A12016-03-03
Foreign References:
JP2017059662A2017-03-23
JP2015106695A2015-06-08
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (22F Shinjuku L Tower, 1-6-1 Nishi-Shinjuku, Shinjuku-k, Tokyo 22, 〒1631522, JP)
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