Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/116827
Kind Code:
A1
Abstract:
A semiconductor device of the present disclosure is provided with: a first field effect transistor 10 having at least two channel structure parts 11 each having a nanowire structure 40 or a nanosheet structure; and a second field effect transistor 20 having a fin structure, wherein the channel structure parts 11 are spaced apart from each other in the thickness direction of the first field effect transistor.
Inventors:
FUKUZAKI YUZO (JP)
Application Number:
PCT/JP2018/042528
Publication Date:
June 20, 2019
Filing Date:
November 16, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/8234; H01L21/336; H01L21/8238; H01L27/088; H01L27/092; H01L29/78
Foreign References:
| JP2017523589A | 2017-08-17 | |||
| JP2014505995A | 2014-03-06 | |||
| US8536029B1 | 2013-09-17 |
Attorney, Agent or Firm:
YAMAMOTO Takahisa et al. (JP)
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