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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/176470
Kind Code:
A1
Abstract:
This semiconductor device 100a includes a substrate 102 and an n-type layer 104 which is formed on the surface of the substrate 102 and made of a nitride semiconductor (A). In the n-type layer 104, the concentration of donor impurities (exclusive of O) is 1×1015 cm-3 to 1×1020 cm-3, the concentration of C impurities is 1×1016 cm-3 or less, the concentration of O impurities is 1×1016 cm-3 or less, and the concentration of Ca impurities is 1×1016 cm-3 or less, and the total concentration of the C impurities, the O impurities, and the Ca impurities is lower than the concentration of the donor impurities. This semiconductor device 100a can be manufactured by using a halogen-free vapor phase epitaxy (HF-VPE) apparatus.

Inventors:
KIMURA TAISHI (JP)
NAKAMURA DAISUKE (JP)
NARITA TETSUO (JP)
KATAOKA KEITA (JP)
Application Number:
PCT/JP2019/006058
Publication Date:
September 19, 2019
Filing Date:
February 19, 2019
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Assignee:
TOYOTA CHUO KENKYUSHO KK (JP)
International Classes:
H01L29/861; C23C14/06; C30B25/02; C30B29/38; H01L21/205; H01L21/329; H01L21/336; H01L29/12; H01L29/78; H01L29/868; H01L29/872
Domestic Patent References:
WO2015053341A12015-04-16
WO2017159311A12017-09-21
Foreign References:
JP2014073918A2014-04-24
JP2009269816A2009-11-19
Attorney, Agent or Firm:
HATAKEYAMA Fumio (JP)
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