Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/181801
Kind Code:
A1
Abstract:
When the thickness of a Si substrate is denoted by dt [cm], the resistance of the Si substrate is denoted by ρs [Ω・cm], the width of each trench is denoted by Wt [cm], the thickness of a first electrode formed on the side surfaces of the trenches is denoted by tm [cm], the resistance of the first electrode is denoted by ρm [Ω・cm], the interface resistance between the first electrode and the Si substrate is denoted by Rms [Ω・cm2], the interface resistance between the first electrode and the drift layer is denoted by Rmg [Ω・cm2], the interface resistance between the Si substrate and the drift layer is Rsg [Ω・cm2], the total number of trenches is denoted by n, the length of the Si substrate in a prescribed direction is denoted by Wx [cm], and α = n・Wt/Wx, then the ratio tm/Wt of tm to Wt satisfies the condition of expression (a). (a): tm/Wt>ρm・dt/{2α(Rms+ρs・dt+Rsg)-2Rmg}
Inventors:
SAGAWA AKIRA (JP)
Application Number:
PCT/JP2023/007285
Publication Date:
September 28, 2023
Filing Date:
February 28, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/872; H01L21/329; H01L29/47
Domestic Patent References:
| WO2021176833A1 | 2021-09-10 |
Foreign References:
| JP2018078177A | 2018-05-17 | |||
| JP2009278067A | 2009-11-26 | |||
| JP2008124217A | 2008-05-29 | |||
| JP2011061000A | 2011-03-24 | |||
| JP2013201413A | 2013-10-03 | |||
| JP2006156658A | 2006-06-15 | |||
| JP2010192491A | 2010-09-02 | |||
| JP2007129166A | 2007-05-24 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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