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Title:
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SOI SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/132207
Kind Code:
A1
Abstract:
Provided is a semiconductor device that exhibits a stable high-frequency characteristic. This semiconductor device (10) is provided with the following composition. Diffusion regions (220), within which an acceptor is introduced, are formed on a silicon substrate (100). Non-diffusion regions (240), within which the acceptor is not introduced, are formed alternately with the diffusion regions (220) on the silicon substrate (100). A first insulation layer (300) is formed so as to come in contact with the silicon substrate (100). Further, wirings (620) are formed on the first insulation layer (300).

Inventors:
MATSUNO NORIAKI (JP)
Application Number:
PCT/JP2012/001161
Publication Date:
October 04, 2012
Filing Date:
February 21, 2012
Export Citation:
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Assignee:
RENESAS ELECTRONICS CORP (JP)
MATSUNO NORIAKI (JP)
International Classes:
H01L21/3205; H01L21/822; H01L23/52; H01L27/04; H01L29/786
Foreign References:
JPH0974102A1997-03-18
JPH08316420A1996-11-29
JP2008282988A2008-11-20
JP2000323658A2000-11-24
JPH08222696A1996-08-30
JP2008108799A2008-05-08
Attorney, Agent or Firm:
HAYAMI, Shinji et al. (JP)
Shinji Hayami (JP)
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Claims:



 
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