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Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE SENSOR, IMAGING DEVICE, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/152513
Kind Code:
A1
Abstract:
The present invention pertains to: a semiconductor device which is capable of suppressing dielectric breakdown caused by Cu diffusion which occurs when electrodes of a wafer are bonded together and suppressing the generation of a leakage current; a method for manufacturing the semiconductor device; a solid-state image sensor; an imaging device; and an electronic device. An electrode made of metal is disposed on the surface of a substrate, a non-metallic region composed of SiO2 is formed by an insulating film, and the surfaces of two substrates including the electrode and the non-metallic region and having a void formed so as to surround the electrode in a structure preventing the metal from diffusing to the non-metallic region after the insulation film is disposed on the outermost surface, are bonded together such that the electrodes face each other. The present invention can be applied to a CMOS image sensor.

Inventors:
FUJII NOBUTOSHI (JP)
NAGAHAMA YOSHIHIKO (JP)
FURUSE SHUNSUKE (JP)
HAGIMOTO YOSHIYA (JP)
YAMAMOTO YUICHI (JP)
KOMAI NAOKI (JP)
TAKIMOTO KAORI (JP)
Application Number:
PCT/JP2016/057280
Publication Date:
September 29, 2016
Filing Date:
March 09, 2016
Export Citation:
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Assignee:
SONY CORP (JP)
International Classes:
H01L21/768; H01L21/02; H01L21/60; H01L23/522; H01L25/065; H01L25/07; H01L25/18; H01L27/00; H01L27/14; H04N5/369; H04N5/374
Domestic Patent References:
WO2007138921A12007-12-06
Foreign References:
JP2014187166A2014-10-02
JP2013033786A2013-02-14
JP2014170793A2014-09-18
JP2013038112A2013-02-21
JP2013168419A2013-08-29
JP2013533629A2013-08-22
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
Nishikawa 孝 (JP)
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