Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
Document Type and Number:
WIPO Patent Application WO1999030363
Kind Code:
A3
Abstract:
The invention relates to a semiconductor device, for example an IC having conductor tracks (3) of a metal (3) exhibiting a better conductance than aluminium, such as copper, silver, gold or an alloy thereof. The conductor track (3) is situated on an insulating layer (2) and is connected to a semiconductor region (1A) or to an aluminium conductor track by means of a metal plug (5), for example of tungsten, which is situated in an aperture (4) in the insulating layer (2). The bottom and walls of the aperture (4) are provided with an electroconductive material (6), such as titanium nitride, which forms a diffusion barrier for the metal (3). In accordance with the invention, the insulating layer (2) comprises a sub-layer (2A), which forms a diffusion barrier for the metal (3) and which extends, outside the aperture (4), throughout the surface of the semiconductor body (10). As a result, the conductor tracks (3) no longer have to be provided with a sheath serving as a diffusion barrier for the metal (3). As a result, the conductor tracks (3) may have a cross section of very small dimensions, while the electic resistance of the conductor tracks (3) is still sufficiently low. The same applies for any further conductor tracks (8), which may be present above the conductor tracks (3) and which are electrically insulated therefrom. Preferably, the electrically insulating sub-layer (2A) is situated approximately in the middle of the insulating layer (2). By virtue thereof, the contribution of the sub-layer (2A) to capacitances threatening the velocity of the IC is minimized. Suitable materials for the sub-layer (2A) are oxides, nitrides, fluorides and carbides, for example aluminium oxide, magnesium fluoride or silicon carbide. The insulating layers (2, 7, 11, 12) preferably comprise silicon dioxide.
Inventors:
KORDIC SRDJAN
MUTSAERS CORNELIS ADRIANUS HEN
KLEE MAREIKE KATHARINE
GROEN WILHELM ALBERT
MUTSAERS CORNELIS ADRIANUS HEN
KLEE MAREIKE KATHARINE
GROEN WILHELM ALBERT
Application Number:
PCT/IB1998/001899
Publication Date:
August 26, 1999
Filing Date:
November 30, 1998
Export Citation:
Assignee:
KONINKL PHILIPS ELECTRONICS NV (NL)
PHILIPS SVENSKA AB (SE)
PHILIPS SVENSKA AB (SE)
International Classes:
H01L23/522; H01L21/285; H01L21/762; H01L21/768; H01L23/485; H01L23/532; H01L29/06; H01L29/45; (IPC1-7): H01L21/762; H01L21/762; H01L29/06
Foreign References:
| EP0725440A2 | 1996-08-07 | |||
| EP0194950A2 | 1986-09-17 | |||
| EP0913863A2 | 1999-05-06 |
Other References:
PATENT ABSTRACTS OF JAPAN; & JP 10092924 A (TOSHIBA CORP) 10 April 1998.
THIN SOLID FILMS, Volume 52, 1978, M.A. NICOLET, "Diffusion Barriers in Thin Films", pages 415-443.
THIN SOLID FILMS, Volume 52, 1978, M.A. NICOLET, "Diffusion Barriers in Thin Films", pages 415-443.
Download PDF: