Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/105353
Kind Code:
A1
Abstract:
A MOSFET (1) is provided with: a substrate (10) composed of silicon carbide, and upon which is formed a first trench (17) that is opened towards the main surface (10A) side of the substrate (10); a gate insulation film (20); and a gate electrode (30). The substrate (10) comprises: an n-type source section (15) further comprising the main surface (10A) of the substrate (10) and the wall face (17A) of the first trench (17); a p-type body section (14) that comes in contact with the source section (15), and that further comprises the wall face (17A) of the first trench (17); an n-type drift section (13) that comes in contact with the body section (14), and that further comprises the wall face (17A) of the first trench (17); and a p-type deep section (16) that comes in contact with the body section (14), and extends to a section deeper than the first trench (17). The first trench (17) is formed such that the distance between the wall face (17A) and the deep section (16) increases with distance from the main surface (10A) of the substrate (10).
Inventors:
MASUDA TAKEYOSHI (JP)
WADA KEIJI (JP)
HIYOSHI TORU (JP)
WADA KEIJI (JP)
HIYOSHI TORU (JP)
Application Number:
PCT/JP2012/080822
Publication Date:
July 18, 2013
Filing Date:
November 29, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12
Foreign References:
| JPH02156678A | 1990-06-15 | |||
| JP2005340685A | 2005-12-08 | |||
| JP2009043966A | 2009-02-26 | |||
| JP2013012590A | 2013-01-17 | |||
| JP2009117593A | 2009-05-28 |
Other References:
See also references of EP 2804216A4
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: