SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2010/119789

A1

Disclosed is a semiconductor device which comprises: a semiconductor layer of a first conductivity type, which is composed of SiC; a body region of a second conductivity type, which is formed in a surface portion of the semiconductor layer; a gate trench which is excavated from the surface of the semiconductor layer such that the bottom surface thereof is positioned below the body region in the semiconductor layer; a source region of the first conductivity type, which is formed in a surface portion of the body region so as to be adjacent to the a lateral surface of the gate trench; a gate insulating film which is formed on the bottom surface and lateral surface of the gate trench in such a manner that the film thickness of the portion formed on the bottom surface is larger than the film thickness of the portion formed on the lateral surface; a gate electrode which is buried in the gate trench with the gate insulating film interposed therebetween; and an implanted layer which is formed by implantation of an impurity of the second conductivity type in a portion ranging from the bottom surface of the gate trench in the semiconductor layer to a position partway in the thickness direction of the semiconductor layer.

JPH02223924	PRODUCTION OF DISPLAY PANEL
WO/2021/110349	VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME
JP2004071959	SEMICONDUCTOR DEVICE

NAKANO YUKI (JP)

PCT/JP2010/056180

October 21, 2010

April 05, 2010

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ROHM CO LTD (JP)
NAKANO YUKI (JP)

H01L29/78; H01L21/336; H01L29/12

JPH1098188A	1998-04-14
US20090072306A1	2009-03-19
JP2000312003A	2000-11-07
JP2007165657A	2007-06-28
JP2006066438A	2006-03-09

INAOKA, Kosaku et al. (JP)
Kosaku Inaoka (JP)

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