Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/129021
Kind Code:
A1
Abstract:
Provided are a structure and a manufacturing method for a storage device that allow resetting to be performed using a reset gate, and the cross-sectional areas of phase-change films and lower electrodes to be reduced in the direction of flow of an electric current, this being achieved by the storage device being characterized in that storage elements are arranged in two or more rows and two or more columns, the storage elements having columnar insulator layers (180-183), phase-change films (189-192) formed around the upper portions of the columnar insulator layers, lower electrodes (184-187) formed around the lower portions of the columnar insulator layers and connected to the phase-change films, a reset gate insulating film (197) that surrounds the phase-change films, and a reset gate (198) that surrounds the reset gate insulating film, the reset gate being connected in the row direction and in the column direction, the storage device also being characterized in that the reset gate is a heater.
Inventors:
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
NAKAMURA HIROKI (JP)
Application Number:
PCT/JP2014/055038
Publication Date:
September 03, 2015
Filing Date:
February 28, 2014
Export Citation:
Assignee:
UNISANTIS ELECT SINGAPORE PTE (SG)
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
International Classes:
H01L27/105; H01L45/00
Domestic Patent References:
| WO2013093988A1 | 2013-06-27 | |||
| WO2013038553A1 | 2013-03-21 |
Foreign References:
| JP2012186424A | 2012-09-27 | |||
| JP2009123847A | 2009-06-04 | |||
| JP2011199017A | 2011-10-06 |
Attorney, Agent or Firm:
TSUJII Koichi et al. (JP)
辻居 Koichi (JP)
辻居 Koichi (JP)
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