Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/021299
Kind Code:
A1
Abstract:
[Problem] A semiconductor device, has: a plurality of trenches formed on the upper surface of a semiconductor substrate; trench electrodes disposed in each of the trenches; a first-conductivity-type first semiconductor layer, a second-conductivity-type second semiconductor layer, and a first-conductivity-type third semiconductor layer that are formed in a first range flanked by adjacent trenches among the trenches; an interlayer insulation film disposed on the upper surface of the semiconductor substrate, the interlayer insulation film having a plurality of contact holes in the first range; first conductor layers formed in each of the contact holes; and a surface electrode disposed on the interlayer insulation film, the surface electrode being connected to each of the first conductor layers.
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Inventors:
KAMEYAMA SATORU (JP)
MISUMI TADASHI (JP)
OKAWARA JUN (JP)
IWASAKI SHINYA (JP)
MISUMI TADASHI (JP)
OKAWARA JUN (JP)
IWASAKI SHINYA (JP)
Application Number:
PCT/JP2015/066523
Publication Date:
February 11, 2016
Filing Date:
June 08, 2015
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
International Classes:
H01L21/28; H01L29/78; H01L21/336; H01L21/768; H01L23/522; H01L29/739
Domestic Patent References:
| WO2014097454A1 | 2014-06-26 |
Foreign References:
| JP2012114321A | 2012-06-14 | |||
| JP2014013850A | 2014-01-23 |
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
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