Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/080322
Kind Code:
A1
Abstract:
This semiconductor device comprises: a semiconductor layer; a gate trench that divides a source region of a first conductivity type in the semiconductor layer; a channel region of a second conductivity type below the source region; a source trench that penetrates the source region and the channel region; an impurity region of the second conductivity type on the bottom and side of the source trench; a source electrode on the semiconductor layer; and a high-concentration impurity region of the second conductivity type, which has a contact part in the surface of the semiconductor layer, said contact part being connected to the source electrode, and penetrates the source region so as to extend to a deeper position than the source region, while having a higher concentration than the impurity region.
Inventors:
NAKANO YUKI (JP)
NAKAMURA RYOTA (JP)
NAKAMURA RYOTA (JP)
Application Number:
PCT/JP2015/082043
Publication Date:
May 26, 2016
Filing Date:
November 13, 2015
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12
Domestic Patent References:
| WO2012131768A1 | 2012-10-04 |
Foreign References:
| JP2014067754A | 2014-04-17 | |||
| JP2014175314A | 2014-09-22 |
Attorney, Agent or Firm:
INAOKA, Kosaku et al. (JP)
Kosaku Inaoka (JP)
Kosaku Inaoka (JP)
Download PDF: