Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/064949
Kind Code:
A1
Abstract:
According to the present invention, a trench (16) is formed in a first main surface of a silicon carbide semiconductor base; a second base region (4) of a second conductivity type is arranged at a position where the second base region (4) faces the trench (16) in the depth direction; and the drain electrode (13)-side end of the second base region (4) of the second conductivity type and the drain electrode (13)-side end of a first base region (3) of the second conductivity type reach a deeper position than the drain electrode (13)-side end of a region (5) of a first conductivity type. Consequently, the electric field intensity of a gate insulating film at the trench bottom is relaxed and the withstand voltage design of a withstand voltage structure part is able to be made easier by suppressing the withstand voltage of an active part. In addition, this semiconductor device is able to be formed by a simple production method according to the present invention.
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Inventors:
KINOSHITA AKIMASA (JP)
HARADA SHINSUKE (JP)
TANAKA YASUNORI (JP)
HARADA SHINSUKE (JP)
TANAKA YASUNORI (JP)
Application Number:
PCT/JP2016/076419
Publication Date:
April 20, 2017
Filing Date:
September 08, 2016
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
NAT INST ADVANCED IND SCIENCE & TECH (JP)
NAT INST ADVANCED IND SCIENCE & TECH (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12
Foreign References:
| JP2012169385A | 2012-09-06 | |||
| JP2012169384A | 2012-09-06 |
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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