Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/094874
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device and a method for manufacturing a semiconductor device, in which manufacturing costs can be minimized and yield is high. With this semiconductor device, a first substrate 11 and a second substrate 12 are arranged across a gap, and first electrodes 21c and second electrodes 22c are provided at positions facing each other. A conductor film 13 has a sheet-shaped base material 23 comprising an insulator, and a plurality of connection columns 24 comprising column shaped conductors of nanosized diameters. The base material 23 is arranged so as to fill the space between the connection columns 24 arranged in parallel across a gap. The connection columns 24 are provided so that the two end parts 24a project in respective fashion from the two surfaces of the base material 23. The conductive film 13 is arranged between the first substrate 11 and the second substrate 12, and the two end parts 24a of the connection columns 24 are joined in a respective manner to the first electrode 21c and the second electrode 22c so as to electrically connect the first electrode 21c and the second electrode 22c.

Inventors:
KOYANAGI MITSUMASA (JP)
TANAKA TETSU (JP)
FUKUSHIMA TAKAFUMI (JP)
LEE KANGWOOK (JP)
ABE HIROFUMI (JP)
HOTTA YOSHINORI (JP)
Application Number:
PCT/JP2016/085865
Publication Date:
June 08, 2017
Filing Date:
December 02, 2016
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
UNIV TOHOKU (JP)
FUJIFILM CORP (JP)
International Classes:
H01L21/60; B23K20/00; H01L25/065; H01L25/07; H01L25/18; H01R11/01; H05K1/14
Foreign References:
JP2009164095A2009-07-23
JP2002151549A2002-05-24
JP2000286293A2000-10-13
JPS62237739A1987-10-17
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Download PDF: