Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/115479
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a technique that is capable of suppressing cracking of a crystalline nitride layer, which occurs due to a stress caused by the difference between the thermal expansion coefficients of a crystalline nitride and diamond. This semiconductor device is provided with a crystalline nitride layer, a structure containing silicon, and a diamond layer. The structure is provided on a first main surface of the crystalline nitride layer. The diamond layer is arranged on at least a lateral part of the structure; and a gap is provided between the diamond layer and the first main surface of the crystalline nitride layer. The gap serves, for example, as a stress absorbing space.
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Inventors:
FURUHATA TAKEO (JP)
SHINAGAWA TOMOHIRO (JP)
SHINAGAWA TOMOHIRO (JP)
Application Number:
PCT/JP2016/067481
Publication Date:
July 06, 2017
Filing Date:
June 13, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
C23C16/27; H01L21/338; C30B29/38; H01L21/205; H01L29/267; H01L29/778; H01L29/812
Domestic Patent References:
WO2015027080A2 | 2015-02-26 |
Foreign References:
JP2015517205A | 2015-06-18 | |||
JP2010067662A | 2010-03-25 | |||
JP2004532513A | 2004-10-21 | |||
JP2013211303A | 2013-10-10 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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