SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2017/154072

Kind Code:

A1

Abstract:

A semiconductor device of the present invention is provided with a first insulating resin section (7) for sealing a mounting surface (2a) of a lead frame (2), and a second insulating resin section (8) for sealing a heat dissipating surface (2b) of the lead frame. The second insulting resin section (8) contains a filler (18) having a maximum diameter of 0.02-0.075mm, the second insulating resin section (8) has a thin portion forming section (10) that is formed in contact with the heat dissipating surface (2b) of the lead frame (2), and the thickness of the thin portion forming section (10) is 1.1 to 2 times the maximum diameter of the filler (18). The semiconductor device has a mixed layer, in which the resin of the first insulating resin section (7) and that of the second insulating resin section (8) are mixed at an interface between the first insulating resin section and the second insulating resin section.

Inventors:

KAJIHARA TAKANOBU (JP)
OMAE KATSUHIKO (JP)
FUSHIE SHUNSUKE (JP)
KANETO YOSHINORI (JP)
SUZUKI JUNYA (JP)
OKABE YUKI (JP)

Application Number:

PCT/JP2016/056975

Publication Date:

September 14, 2017

Filing Date:

March 07, 2016

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP (JP)

International Classes:

H01L23/29; H01L23/31; H01L25/07; H01L25/18

Domestic Patent References:

WO2015151273A1

2015-10-08

Foreign References:

JP2002237562A	2002-08-23
JPH09102580A	1997-04-15
JP2015191979A	2015-11-02
JP2012160517A	2012-08-23
JP2002299538A	2002-10-11
JP2009302526A	2009-12-24
JP2016018904A	2016-02-01
JPH0215738U	1990-01-31
JP2011176024A	2011-09-08
JP2001170928A	2001-06-26

Other References: