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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/146569
Kind Code:
A1
Abstract:
Provided is a semiconductor device having excellent electrical characteristics. Provided is a highly productive method for manufacturing a semiconductor device. Provided is a high-yield method for manufacturing a semiconductor device. A method for manufacturing a semiconductor device, including a first step for forming a first insulating layer that contains silicon and nitrogen, a second step for adding oxygen near the surface of the first insulating layer, a third step for forming a semiconductor layer that contains a metal oxide adjacent to the first insulating layer, a fourth step for forming a second insulating layer that contains oxygen adjacent to the semiconductor layer, a fifth step for performing a plasma treatment at a first temperature in an oxygen-containing atmosphere, a sixth step for performing a plasma treatment at a second temperature lower than the first temperature in an oxygen-containing atmosphere, and a seventh step for forming a third insulating layer that contains silicon and nitrogen on the second insulating layer.

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Inventors:
NAKAZAWA YASUTAKA
SHIMA YUKINORI
OKAZAKI KENICHI (JP)
KOEZUKA JUNICHI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2018/050471
Publication Date:
August 16, 2018
Filing Date:
January 26, 2018
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/336; G09F9/30; H01L29/786; H01L51/50; H05B33/10; H05B33/14
Foreign References:
JP2013140949A2013-07-18
JP2013175713A2013-09-05
JP2016063225A2016-04-25
JP2011187506A2011-09-22
JP2013179290A2013-09-09
JP2013201428A2013-10-03
JP2015179839A2015-10-08
JP2011135066A2011-07-07
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