Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/146933
Kind Code:
A1
Abstract:
Provided are a semiconductor device with which a change in form of an insulating circuit substrate can be suppressed and improved heat dissipation can be obtained, and a method for manufacturing the same. The semiconductor device is provided with: an insulating circuit substrate (3a, 3b, 3c) on which a semiconductor chip (7) is mounted; and a case (1a) which has bonding areas 8 for bonding to the insulating circuit substrate (3a, 3b, 3c) in each of at least a pair of side wall portions forming two sides opposing each other. Each bonding area 8 has an arched shape with the center in a direction in which the two sides extend protruding beyond the ends toward the insulating circuit substrate (3a, 3b, 3c).
Inventors:
KAI KENSHI (JP)
MARUYAMA RIKIHIRO (JP)
MIYAZAKI YOSHIHIRO (JP)
MARUYAMA RIKIHIRO (JP)
MIYAZAKI YOSHIHIRO (JP)
Application Number:
PCT/JP2017/044094
Publication Date:
August 16, 2018
Filing Date:
December 07, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L23/36; H01L23/12; H01L23/40; H01L25/07; H01L25/18
Domestic Patent References:
WO2014041936A1 | 2014-03-20 |
Foreign References:
US5981036A | 1999-11-09 | |||
JPH0945852A | 1997-02-14 | |||
JP2015216349A | 2015-12-03 | |||
JP2016058563A | 2016-04-21 | |||
JP2011187711A | 2011-09-22 | |||
JPH08236667A | 1996-09-13 | |||
JP2005294792A | 2005-10-20 |
Attorney, Agent or Firm:
SUZUKI Sohbe (JP)
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