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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/146933
Kind Code:
A1
Abstract:
Provided are a semiconductor device with which a change in form of an insulating circuit substrate can be suppressed and improved heat dissipation can be obtained, and a method for manufacturing the same. The semiconductor device is provided with: an insulating circuit substrate (3a, 3b, 3c) on which a semiconductor chip (7) is mounted; and a case (1a) which has bonding areas 8 for bonding to the insulating circuit substrate (3a, 3b, 3c) in each of at least a pair of side wall portions forming two sides opposing each other. Each bonding area 8 has an arched shape with the center in a direction in which the two sides extend protruding beyond the ends toward the insulating circuit substrate (3a, 3b, 3c).

Inventors:
KAI KENSHI (JP)
MARUYAMA RIKIHIRO (JP)
MIYAZAKI YOSHIHIRO (JP)
Application Number:
PCT/JP2017/044094
Publication Date:
August 16, 2018
Filing Date:
December 07, 2017
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L23/36; H01L23/12; H01L23/40; H01L25/07; H01L25/18
Domestic Patent References:
WO2014041936A12014-03-20
Foreign References:
US5981036A1999-11-09
JPH0945852A1997-02-14
JP2015216349A2015-12-03
JP2016058563A2016-04-21
JP2011187711A2011-09-22
JPH08236667A1996-09-13
JP2005294792A2005-10-20
Attorney, Agent or Firm:
SUZUKI Sohbe (JP)
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