Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/163012
Kind Code:
A1
Abstract:
Provided is a semiconductor device having good electrical properties. This semiconductor device has an oxide, an insulator, and a conductor overlapping a first region of the oxide with the insulator interposed therebetween, wherein the oxide includes In, an element M (M is Al, Ga, Y, or Sn), and Zn, and has a second region adjacent to the first region and a higher concentration of the element M in the second region than in the first region.
Inventors:
YAMAZAKI SHUNPEI (JP)
OIKAWA YOSHIAKI (JP)
OKUNO NAOKI (JP)
ANDO MOTOHARU (JP)
OKAMOTO SATORU (JP)
OIKAWA YOSHIAKI (JP)
OKUNO NAOKI (JP)
ANDO MOTOHARU (JP)
OKAMOTO SATORU (JP)
Application Number:
PCT/IB2018/051210
Publication Date:
September 13, 2018
Filing Date:
February 27, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/82; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792
Foreign References:
| JP2013236070A | 2013-11-21 | |||
| JP2013175711A | 2013-09-05 | |||
| JP2015188064A | 2015-10-29 |
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