Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/163605
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor device with which it is possible to minimize increases in production cost and ensure high reliability while reducing parasitic capacitance. [Solution] There is provided a semiconductor device equipped with: a substrate having an embedded insulation film and a semiconductor layer provided on the embedded insulation film, a semiconductor element being formed in the semiconductor layer; and a gate electrode provided on the semiconductor layer. The gate electrode has a strip-shaped first electrode part extending beyond the end part of the semiconductor layer from the center part of the semiconductor layer along a first direction when the substrate is viewed from above. In a cross-section obtained by cutting the first electrode part and the substrate along the first direction, the film thickness of the end part of the semiconductor layer is greater than the film thickness of the center part of the semiconductor layer.
Inventors:
IBUSUKI YUJI (JP)
OKAMOTO DAISAKU (JP)
OKAMOTO DAISAKU (JP)
Application Number:
PCT/JP2018/001323
Publication Date:
September 13, 2018
Filing Date:
January 18, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L27/088; H01L29/78
Foreign References:
| JP2000216391A | 2000-08-04 | |||
| JP2011071262A | 2011-04-07 | |||
| JPH09186167A | 1997-07-15 | |||
| JP2005514770A | 2005-05-19 | |||
| US5116771A | 1992-05-26 |
Attorney, Agent or Firm:
KAMEYA, Yoshiaki et al. (JP)
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