SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2018/178806

A1

Provided is a semiconductor device having a high integration degree. This semiconductor device has: an oxide semiconductor having a first region, a second region, a third region adjacent to the first region and the second region, and a fourth region adjacent to the second region; a first insulator on the oxide semiconductor; a first conductor on the first insulator; a second insulator on the oxide semiconductor, first insulator, and first conductor; a third insulator that is provided on the side surface of the first insulator, and the side surface of the first conductor by having the second insulator therebetween; a fourth insulator on the second insulator and the third insulator; and a second conductor in contact with the oxide semiconductor. The first region is in contact with the first insulator, and is superimposed with the third insulator by having the first insulator and conductor therebetween, the second region is in contact with the second insulator, and is superimposed with the third insulator by having the second insulator therebetween, the third region is in contact with the second insulator, and is superimposed with the third insulator by having the second insulator and the third insulator therebetween, and the fourth region is in contact with the second conductor.

YAMAZAKI SHUNPEI (JP)
YAMADE NAOTO (JP)
FUJIKI HIROSHI
MURAKAWA TSUTOMU (JP)
TAKEUCHI TOSHIHIKO (JP)

PCT/IB2018/051840

October 04, 2018

March 20, 2018

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SEMICONDUCTOR ENERGY LAB (JP)

H01L21/336; H01L21/8242; H01L27/108; H01L29/786; H03K19/177

JP2016027649A	2016-02-18
JP2016189461A	2016-11-04
JP2013123042A	2013-06-20
JP2013179283A	2013-09-09
JP2013175711A	2013-09-05

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