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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/225571
Kind Code:
A1
Abstract:
The purpose of the present invention is to reduce thermal fatigue at the junction of external wiring and improve long-term reliability. Provided is a semiconductor device comprising: a semiconductor substrate; transistor sections and diode sections arranged alternately along a first direction parallel to the front surface of the semiconductor substrate inside the semiconductor substrate; a surface electrode which is provided above the transistor sections and the diode sections and is electrically connected to the transistor sections and the diode sections; and external wiring which is joined to the surface electrode and has a portion in contact with the surface electrode, the width of the portion in the first direction being larger than at least one of the width of the transistor section in the first direction and the width of the diode section in the first direction.

Inventors:
YAMANO AKIO (JP)
TAKASAKI AIKO (JP)
ICHIKAWA HIROAKI (JP)
Application Number:
PCT/JP2018/020425
Publication Date:
December 13, 2018
Filing Date:
May 28, 2018
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/3205; H01L21/60; H01L21/768; H01L21/8234; H01L23/522; H01L27/06; H01L29/417; H01L29/739
Foreign References:
JP2016225469A2016-12-28
JP2000004017A2000-01-07
JP2008047772A2008-02-28
JP2008258499A2008-10-23
JP2010283205A2010-12-16
JPH05283706A1993-10-29
JPH07235672A1995-09-05
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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