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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/025911
Kind Code:
A1
Abstract:
Provided is a semiconductor device which can be made fine or highly integrated. The semiconductor device comprises: an oxide; a first conductor and a second conductor disposed at a distance from each other and on the oxide; a first insulator that is disposed on the first conductor and the second conductor, and that has an opening formed superimposed between the first conductor and the second conductor; a third conductor disposed in the opening; and a second insulator disposed between the third conductor and the oxide, the first conductor, the second conductor and the first insulator. The second insulator has a first film thickness between the oxide and the third conductor, and has a second film thickness between the third conductor and the first conductor or second conductor, the first film thickness being thinner than the second film thickness.

Inventors:
YAMAZAKI, Shunpei (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
MATSUBAYASHI, Daisuke (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
ASAMI, Yoshinobu (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
Application Number:
IB2018/055578
Publication Date:
February 07, 2019
Filing Date:
July 26, 2018
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (398 Hase, Atsugi-shi Kanagawa, 36, 〒2430036, JP)
International Classes:
H01L21/336; H01L21/28; H01L21/283; H01L21/8242; H01L27/108; H01L27/1156; H01L29/417; H01L29/786; H01L29/788; H01L29/792
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