Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/106983
Kind Code:
A1
Abstract:
The influence of a crystal defect occurring in a semiconductor substrate in the vicinity of an element isolation region is mitigated. A semiconductor device according to the present invention is provided with a semiconductor element region, an element isolation region, and a heavily doped impurity region. The semiconductor element region is disposed on a surface of a semiconductor substrate. The element isolation region is formed at a prescribed depth from the surface of the semiconductor substrate and isolates the semiconductor element region. The heavily doped impurity region is configured to have a higher impurity concentration than the semiconductor substrate, is disposed between the semiconductor element region and the element isolation region, and is not disposed below the element isolation region.

Inventors:
ENOMOTO Takayuki (4000-1 Oaza-Haramizu, Kikuyo-machi Kikuchi-gu, Kumamoto 02, 〒8691102, JP)
Application Number:
JP2018/038287
Publication Date:
June 06, 2019
Filing Date:
October 15, 2018
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION (4-14-1 Asahi-cho, Atsugi-shi Kanagawa, 14, 〒2430014, JP)
International Classes:
H01L21/76; H01L27/146
Attorney, Agent or Firm:
MATSUO Kenichiro (7th Floor, Shinkumi Akasaka Bldg. 10-17, Akasaka 1-chome, Chuo-ku, Fukuoka-sh, Fukuoka 42, 〒8100042, JP)
Download PDF: