Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/166906
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a high on-current. This semiconductor device is provided with: a first oxide; a second oxide on the first oxide; a third oxide on the second oxide; a first insulator on the third oxide; a conductor on the first insulator; a second insulator which contacts the second oxide and the third oxide; and a third insulator on the second insulator, wherein the second oxide has first to fifth regions, the resistances of the first region and the second region are lower than the resistance of the third region, the resistances of the fourth region and the fifth region are lower than the resistance of the third region and higher than the resistances of the first region and the second region, and the conductor is provided over the third region, the fourth region, and the fifth region so as to overlap the third region, the fourth region, and the fifth region.

Inventors:
HATA YUKI (JP)
TOCHIBAYASHI KATSUAKI (JP)
SUGAO JUNPEI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2019/051278
Publication Date:
September 06, 2019
Filing Date:
February 18, 2019
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108
Domestic Patent References:
WO2016125052A12016-08-11
Foreign References:
JP2017063192A2017-03-30
JP2016213468A2016-12-15
JP2018022713A2018-02-08
JP2013033923A2013-02-14
Download PDF: