Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/181852
Kind Code:
A1
Abstract:
Provided is a semiconductor device provided with: a semiconductor substrate; a hydrogen donor that is provided inside the semiconductor substrate in the depth direction, that has a doping concentration higher than that of a dopant of the semiconductor substrate, that has a peak doping concentration distribution at a first position separated from one main surface of the semiconductor substrate by a predetermined distance in the depth direction of the semiconductor substrate, and that has a bottom doping concentration distribution where the doping concentration is lower than in the peak, at a position closer to the main surface side than the first position; and a crystal defect region that has a center peak of a crystal defect density at a position shallower than the first position in the depth direction of the semiconductor substrate.
Inventors:
YOSHIMURA TAKASHI (JP)
ONOZAWA YUICHI (JP)
TAKISHITA HIROSHI (JP)
MEGURO MISAKI (JP)
KUBOUCHI MOTOYOSHI (JP)
KODAMA NAOKO (JP)
ONOZAWA YUICHI (JP)
TAKISHITA HIROSHI (JP)
MEGURO MISAKI (JP)
KUBOUCHI MOTOYOSHI (JP)
KODAMA NAOKO (JP)
Application Number:
PCT/JP2019/011180
Publication Date:
September 26, 2019
Filing Date:
March 18, 2019
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/861; H01L21/322; H01L21/329; H01L21/336; H01L29/06; H01L29/12; H01L29/739; H01L29/78; H01L29/868
Domestic Patent References:
| WO2016051973A1 | 2016-04-07 | |||
| WO2017146148A1 | 2017-08-31 | |||
| WO2018030444A1 | 2018-02-15 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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