Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/202350
Kind Code:
A8
Abstract:
A semiconductor device comprising: a substrate (1); a first conductivity-type drift region (4) disposed on a major surface of the substrate (1); a second conductivity-type first well region (21) which extends from a second major surface of the drift region (4) in a vertical direction with respect to the second major surface, and has a bottom portion reaching inside the substrate (1); a second conductivity-type second well region (22) which adjoins the bottom portion and is disposed in the substrate (1) below the bottom portion; and a first conductivity-type source region (3) which extends in the vertical direction from a region of the second major surface in which the first well region (21) is formed, the first conductivity-type source region (3) reaching the second well region (22). In a direction parallel to the second major surface and facing from a source electrode (15) toward a drain electrode (16), the distance by which the second well region (22) adjoins a gate insulating film (6) is less than the distance by which the first well region (21) adjoins the gate insulating film (6).
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Inventors:
NUMAKURA KEIICHIRO (JP)
TAKEMOTO KEISUKE (JP)
HAYAMI YASUAKI (JP)
NI WEI (JP)
MARUI TOSHIHARU (JP)
TANAKA RYOTA (JP)
HAYASHI TETSUYA (JP)
YAMAGAMI SHIGEHARU (JP)
TAKEMOTO KEISUKE (JP)
HAYAMI YASUAKI (JP)
NI WEI (JP)
MARUI TOSHIHARU (JP)
TANAKA RYOTA (JP)
HAYASHI TETSUYA (JP)
YAMAGAMI SHIGEHARU (JP)
Application Number:
PCT/IB2018/000563
Publication Date:
October 22, 2020
Filing Date:
April 19, 2018
Export Citation:
Assignee:
NISSAN MOTOR (JP)
RENAULT SAS (FR)
RENAULT SAS (FR)
International Classes:
H01L21/336; H01L29/78
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (JP)
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