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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/202350
Kind Code:
A8
Abstract:
A semiconductor device comprising: a substrate (1); a first conductivity-type drift region (4) disposed on a major surface of the substrate (1); a second conductivity-type first well region (21) which extends from a second major surface of the drift region (4) in a vertical direction with respect to the second major surface, and has a bottom portion reaching inside the substrate (1); a second conductivity-type second well region (22) which adjoins the bottom portion and is disposed in the substrate (1) below the bottom portion; and a first conductivity-type source region (3) which extends in the vertical direction from a region of the second major surface in which the first well region (21) is formed, the first conductivity-type source region (3) reaching the second well region (22). In a direction parallel to the second major surface and facing from a source electrode (15) toward a drain electrode (16), the distance by which the second well region (22) adjoins a gate insulating film (6) is less than the distance by which the first well region (21) adjoins the gate insulating film (6).

Inventors:
NUMAKURA KEIICHIRO (JP)
TAKEMOTO KEISUKE (JP)
HAYAMI YASUAKI (JP)
NI WEI (JP)
MARUI TOSHIHARU (JP)
TANAKA RYOTA (JP)
HAYASHI TETSUYA (JP)
YAMAGAMI SHIGEHARU (JP)
Application Number:
PCT/IB2018/000563
Publication Date:
October 22, 2020
Filing Date:
April 19, 2018
Export Citation:
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Assignee:
NISSAN MOTOR (JP)
RENAULT SAS (FR)
International Classes:
H01L21/336; H01L29/78
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (JP)
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