Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/161791
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention is provided with: a substrate; a plurality of semiconductor layers stacked on the substrate; and a gate electrode, a drain electrode and a source electrode provided on the semiconductor layers, wherein each of the semiconductor layers has a channel layer formed from GaN, and a barrier layer formed from AlxGa1-xN and provided in contact with the upper surface of the channel layer, and the carbon concentration of the channel layer of the uppermost semiconductor layer among the semiconductor layers is lower than the average value of the carbon concentrations of the channel layers of the semiconductor layers other than the uppermost layer among the semiconductor layers.
Inventors:
NONODA RYOHEI (JP)
ERA ATSUSHI (JP)
ERA ATSUSHI (JP)
Application Number:
PCT/JP2019/004006
Publication Date:
August 13, 2020
Filing Date:
February 05, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO2016143381A1 | 2016-09-15 | |||
| WO2016039177A1 | 2016-03-17 |
Foreign References:
| JP2008211089A | 2008-09-11 | |||
| US20050285098A1 | 2005-12-29 | |||
| JP2016213507A | 2016-12-15 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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