Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/002282
Kind Code:
A1
Abstract:
The present invention improves transistor performance. A semiconductor device according to an embodiment is provided with an insulating film (12) isolating an n-type transistor forming region (Tr1) and a p-type transistor forming region (Tr2) from each other, wherein each of the n-type transistor forming region and the p-type transistor forming region is provided with a gate electrode (13) formed in a first direction on a semiconductor substrate (11), and source/drain regions (22) formed on both sides of the gate electrode in a second direction different from the first direction. The distance from an interface between the insulating film and the source/drain regions to an end of the gate electrode in the second direction differs between the n-type transistor forming region and the p-type transistor forming region.
Inventors:
NAGATOMO KOJI (JP)
Application Number:
PCT/JP2020/025102
Publication Date:
January 07, 2021
Filing Date:
June 25, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/092; H01L21/336; H01L21/76; H01L21/8238; H01L29/78
Foreign References:
| JP2006049903A | 2006-02-16 | |||
| JP2008511170A | 2008-04-10 | |||
| JPH01181468A | 1989-07-19 | |||
| JP2008263168A | 2008-10-30 | |||
| JP2004281631A | 2004-10-07 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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