Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/009620
Kind Code:
A1
Abstract:
Provided is a semiconductor device with good reliability. A semiconductor device of the present invention comprising a first oxide, a first conductor, a second conductor and a first insulator on the first oxide, and a third conductor on the first insulator, wherein: the first conductor includes a first crystal; the second conductor has a crystal structure including the same crystal as the first crystal; the first crystal is (111) oriented with respect to the surface of the first oxide; the first oxide includes a second crystal; the second crystal is c-axis oriented with respect to the formed surface of the first oxide; and the lattice mismatch of the first crystal is 8% or less relative to the second crystal.
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Inventors:
YAMAZAKI SHUNPEI (JP)
TAKAHASHI ERIKA
SASAGAWA SHINYA (JP)
OKUNO NAOKI (JP)
TAKAHASHI MASAHIRO (JP)
TANEMURA KAZUKI (JP)
TAKAHASHI ERIKA
SASAGAWA SHINYA (JP)
OKUNO NAOKI (JP)
TAKAHASHI MASAHIRO (JP)
TANEMURA KAZUKI (JP)
Application Number:
PCT/IB2020/056395
Publication Date:
January 21, 2021
Filing Date:
July 08, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/8234; H01L21/8239; H01L21/8242; H01L27/06; H01L27/088; H01L27/10; H01L27/105; H01L27/108; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792
Domestic Patent References:
| WO2018178793A1 | 2018-10-04 |
Foreign References:
| JP2016157933A | 2016-09-01 | |||
| JP2014099429A | 2014-05-29 | |||
| JP2018067708A | 2018-04-26 | |||
| JP2019087677A | 2019-06-06 | |||
| JP2017175129A | 2017-09-28 |
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