Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/166374
Kind Code:
A1
Abstract:
Provided is a semiconductor device that can be miniaturized or highly integrated. The semiconductor device is provided with a memory cell having a transistor and a capacitor. Either the source electrode or the drain electrode of the transistor is electrically connected to one of the electrodes of the capacitor. A metal oxide can be used for the semiconductor layer of the transistor. An insulator is provided upon the transistor, and an opening having a region that overlaps with the gate electrode of the transistor and either the source electrode or the drain electrode of the transistor is provided in the insulator. The capacitor is provided inside the opening. As a result of the above, the area occupied by the memory cell is reduced while ensuring the capacitance of the capacitor.
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Inventors:
ONUKI TATSUYA (JP)
KUNITAKE HITOSHI (JP)
OIKAWA YOSHIAKI (JP)
YAMAZAKI SHUNPEI (JP)
KUNITAKE HITOSHI (JP)
OIKAWA YOSHIAKI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/051436
Publication Date:
September 07, 2023
Filing Date:
February 17, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/822; H10B12/00; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H10B99/00
Domestic Patent References:
| WO2019197946A1 | 2019-10-17 | |||
| WO2020201865A1 | 2020-10-08 |
Foreign References:
| JP2015181159A | 2015-10-15 |
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