Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/166666
Kind Code:
A1
Abstract:
This semiconductor device comprises: a field insulating film (10) that contacts a first gate electrode (9) formed in a termination trench (7) and is formed from the inside to the outside of the termination trench (7) while covering the top of a termination trench top corner (7a) distant from a gate trench (6) in an extending direction of the gate trench (6), the field insulating film having a thickness that is greater than the thickness of a gate insulating film (8); and a second gate electrode (13) that contacts the top of the field insulating film (10) and the top of the first gate electrode (9) formed in the termination trench (7), and rides up on the field insulating film (10) from the inside to the outside of the termination trench (7) in the extending direction of the gate trench (6). With this configuration, it is possible to prevent breakdown of the gate insulating film (8) formed on the termination trench top corner (7a) distant from an active region (40) in a gate lead-out portion (70).
Inventors:
KOYAMA AKIHIRO (JP)
IWAMATSU TOSHIAKI (JP)
IWAMATSU TOSHIAKI (JP)
Application Number:
PCT/JP2022/009146
Publication Date:
September 07, 2023
Filing Date:
March 03, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/739
Domestic Patent References:
| WO2016047438A1 | 2016-03-31 |
Foreign References:
| JP2009505433A | 2009-02-05 | |||
| JP2001177093A | 2001-06-29 |
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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