Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/171138
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor device which makes it possible to improve withstand voltage performance while having a further compact structure. [Solution] A semiconductor device comprising: a source region that is of a first conductor type and that is composed of a first semiconductor material; a channel region that is of a second conductor type, that is adjacent to the source region, and that is composed of the first semiconductor material; a first drain region that is of the second conductor type, that is adjacent to the channel region, and that is composed of a second semiconductor material having a bandgap larger than the bandgap of the first semiconductor material; and a second drain region that is of the first conductor type, that is adjacent to the first drain region, and that is composed of the second semiconductor material.
Inventors:
OOKUBO KENICHI (JP)
Application Number:
PCT/JP2023/001292
Publication Date:
September 14, 2023
Filing Date:
January 18, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/78; H01L29/12
Foreign References:
| JP2021087012A | 2021-06-03 | |||
| JP2008140817A | 2008-06-19 | |||
| JP2008311392A | 2008-12-25 |
Attorney, Agent or Firm:
ITO, Manabu et al. (JP)
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