Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/191044
Kind Code:
A1
Abstract:
This semiconductor device (100A) comprises: a substrate (2); a gate electrode (3) formed on the substrate (2); a gate insulating layer (4) formed on the gate electrode (3); an oxide semiconductor layer (5) formed on the gate insulating layer (4); a source electrode (6s) and a drain electrode (6d) that are electrically connected to the oxide semiconductor layer (5); a first transparent electrode (7) electrically connected to the drain electrode (6d); an interlayer insulating layer (8a) formed on the source electrode (6s) and the drain electrode (6d); and a second transparent electrode (9) formed on the interlayer insulating layer (8a). At least a portion of the second transparent electrode (9) overlaps the first transparent electrode (7) via the interlayer insulating layer (8a). The oxide semiconductor layer (5) and the first transparent electrode (7) are formed of the same oxide film.
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Inventors:
UCHIDA SEIICHI
OGAWA YASUYUKI
MIYAMOTO TADAYOSHI
ITO KAZUATSU
TAKAMARU YUTAKA
NAKAZAWA MAKOTO
MIYAMOTO MITSUNOBU
OGAWA YASUYUKI
MIYAMOTO TADAYOSHI
ITO KAZUATSU
TAKAMARU YUTAKA
NAKAZAWA MAKOTO
MIYAMOTO MITSUNOBU
Application Number:
PCT/JP2013/066168
Publication Date:
December 27, 2013
Filing Date:
June 12, 2013
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L29/786; G02F1/1343; G02F1/1368; G09F9/30
Domestic Patent References:
| WO2011010415A1 | 2011-01-27 |
Foreign References:
| JP2012018970A | 2012-01-26 | |||
| JP2011091279A | 2011-05-06 | |||
| JP2009099887A | 2009-05-07 |
Attorney, Agent or Firm:
OKUDA SEIJI (JP)
Seiji Okuda (JP)
Seiji Okuda (JP)
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