Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2020/262583
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device having a multilayer structure composed of a plurality of substrates, wherein: propagation of noise or heat between elements that are formed on upper and lower substrates is able to be suppressed; and deterioration of the characteristics of the elements is also able to be suppressed. This semiconductor device is provided with: a first substrate which comprises a first element layer that contains a first active element, a first wiring layer that is arranged on the first element layer, and a shield layer that is arranged on the first wiring layer and contains a conductive material; and a second substrate which comprises a second element layer that is arranged on the shield layer and contains a second active element, and a second wiring layer that is arranged on the second element layer. The first substrate and the second substrate are stacked upon each other.
Inventors:
MIYAZAKI TOSHIHIKO (JP)
KAWAHARA YUKI (JP)
SUZUKI TSUYOSHI (JP)
IIJIMA TADASHI (JP)
KAWAHARA YUKI (JP)
SUZUKI TSUYOSHI (JP)
IIJIMA TADASHI (JP)
Application Number:
PCT/JP2020/025146
Publication Date:
December 30, 2020
Filing Date:
June 26, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; H04N5/369
Domestic Patent References:
| WO2017038403A1 | 2017-03-09 |
Foreign References:
| JP2012094720A | 2012-05-17 | |||
| JP2006019455A | 2006-01-19 | |||
| JP2008134610A | 2008-06-12 | |||
| JP2010016382A | 2010-01-21 | |||
| JP2016534557A | 2016-11-04 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
Download PDF:
Previous Patent: SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SAME
Next Patent: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
Next Patent: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME