Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2023/013190
Kind Code:
A1
Abstract:
A semiconductor wafer 10 comprises a pad electrode PD1 and a plurality of pad electrodes PD2 on the upper surface thereof. An opening OP1 and a plurality of openings OP2 are formed in an insulating film IF that covers the pad electrode PD1 and the plurality of pad electrodes PD2. The pad electrode PD1 is electrically connected to rewiring PW1 in the opening OP1, and the plurality of pad electrodes PD2 are electrically connected to rewiring PW2 in the plurality of openings OP2. The rewiring PW1 has a narrow width region RW1b and a wide width region RW1a. A columnar electrode PE1 is formed on the wide width region RW1a, and a columnar electrode PE2 is formed on the columnar electrode PE1. Rewiring RW3 is formed on the rewiring PW2, and a plurality of columnar electrodes PE3 are formed on the rewiring RW3.
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Inventors:
WAKISAKA SHINJI (JP)
FUKUSHIMA MASATO (JP)
HIROISHI TAKAYUKI (JP)
FUKUSHIMA MASATO (JP)
HIROISHI TAKAYUKI (JP)
Application Number:
PCT/JP2022/019195
Publication Date:
February 09, 2023
Filing Date:
April 27, 2022
Export Citation:
Assignee:
AOI ELECTRONICS CO LTD (JP)
International Classes:
H01L23/12; H01L21/3205; H01L21/768; H01L23/522
Foreign References:
| JP2012186366A | 2012-09-27 | |||
| JP2012119444A | 2012-06-21 | |||
| JP2008112776A | 2008-05-15 | |||
| JP2011114133A | 2011-06-09 | |||
| JP2019102522A | 2019-06-24 | |||
| JP2001156209A | 2001-06-08 | |||
| JP2016219655A | 2016-12-22 |
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
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