Title:
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/116575
Kind Code:
A1
Abstract:
A semiconductor device using SiC, which can be more miniaturized, has ultra-low on-resistance and excellent reliability, and a method of producing the semiconductor device. The semiconductor device comprises: a silicon carbide substrate; a first silicon carbide layer of a first conductivity type provided on a first main surface of the silicon carbide substrate; first silicon carbide regions of a second conductivity type provided on the surface of the first silicon carbide layer; second silicon carbide regions of the first conductivity type provided on the surface of the first silicon carbide regions; third silicon carbide regions of the second conductivity type provided on the lower part of the second silicon carbide regions; trenches which penetrate the second silicon carbide regions and reach the third silicon carbide regions; gate insulating films; gate electrodes; interlayer insulating films covering the gate electrodes; first electrodes which are formed on the second silicon carbide regions of the trench side surfaces and on the interlayer insulating films and which contain a metal element selected from a group comprising Ni, Ti, Ta, Mo, and W; second electrodes which are formed on the third silicon carbide regions of the bottom part of the trenches and on the first electrodes and which contain Al; a first main electrode provided on the second electrodes; and a second main electrode formed on a second main surface of the silicon carbide substrate.
Inventors:
KONO HIROSHI
SHINOHE TAKASHI
MIZUKAMI MAKOTO
SHINOHE TAKASHI
MIZUKAMI MAKOTO
Application Number:
PCT/JP2010/000043
Publication Date:
October 14, 2010
Filing Date:
January 06, 2010
Export Citation:
Assignee:
TOSHIBA KK (JP)
KONO HIROSHI
SHINOHE TAKASHI
MIZUKAMI MAKOTO
KONO HIROSHI
SHINOHE TAKASHI
MIZUKAMI MAKOTO
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/12; H01L29/41; H01L29/739
Domestic Patent References:
| WO2009013886A1 | 2009-01-29 |
Foreign References:
| JP2006135150A | 2006-05-25 | |||
| JP2008053449A | 2008-03-06 | |||
| JPH0194672A | 1989-04-13 | |||
| JP2006135150A | 2006-05-25 |
Other References:
See also references of EP 2416366A4
Attorney, Agent or Firm:
MATSUYAMA, Masayuki et al. (JP)
Mitsuyuki Matsuyama (JP)
Mitsuyuki Matsuyama (JP)
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