Title:
SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/145521
Kind Code:
A1
Abstract:
Disclosed is a semiconductor device, wherein the surface of a semiconductor substrate (1) is formed with abrasive grain marks (62), and dopant diffusing regions (3,5) have a section which extends in a direction which forms an angle within the range of -5° to +5° relative to the extension direction of the abrasive grain marks (62). Also disclosed is a method for producing said semiconductor device.
Inventors:
FUJITA, Kenji (())
藤田 健治 (())
FUNAKOSHI, Yasushi (())
舩越 康志 (())
藤田 健治 (())
FUNAKOSHI, Yasushi (())
舩越 康志 (())
Application Number:
JP2011/061051
Publication Date:
November 24, 2011
Filing Date:
May 13, 2011
Export Citation:
Assignee:
SHARP KABUSHIKI KAISHA (22-22, Nagaike-cho Abeno-ku, Osaka-sh, Osaka 22, 〒5458522, JP)
シャープ株式会社 (〒22 大阪府大阪市阿倍野区長池町２２番２２号 Osaka, 〒5458522, JP)
FUJITA, Kenji (())
藤田 健治 (())
FUNAKOSHI, Yasushi (())
シャープ株式会社 (〒22 大阪府大阪市阿倍野区長池町２２番２２号 Osaka, 〒5458522, JP)
FUJITA, Kenji (())
藤田 健治 (())
FUNAKOSHI, Yasushi (())
International Classes:
H01L31/04; B24B27/06; H01L21/22
Attorney, Agent or Firm:
Fukami Patent Office, p.c. (Nakanoshima Central Tower, 2-7 Nakanoshima 2-chome, Kita-ku, Osaka-sh, Osaka 05, 〒5300005, JP)
Claims: