Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/069672
Kind Code:
A1
Abstract:
Disclosed is a semiconductor device such that abrasive grain marks are formed at the surface of a semiconductor substrate, a dopant diffusion region has a portion extending in a direction forming an angle with the direction of extension of abrasive grain marks within the range of -5° to +5°, and the dopant diffusion region is formed by diffusing a dopant from a doping paste set on one surface of the semiconductor substrate. Further disclosed is a method for producing the semiconductor device.
Inventors:
FUNAKOSHI YASUSHI
Application Number:
PCT/JP2012/078816
Publication Date:
May 16, 2013
Filing Date:
November 07, 2012
Export Citation:
Assignee:
SHARP KK (JP)
FUNAKOSHI YASUSHI
FUNAKOSHI YASUSHI
International Classes:
H01L21/22; H01L31/04
Domestic Patent References:
| WO2011145521A1 | 2011-11-24 | |||
| WO2011024910A1 | 2011-03-03 | |||
| WO2013002061A1 | 2013-01-03 | |||
| WO2013002060A1 | 2013-01-03 |
Foreign References:
| JP2006156646A | 2006-06-15 |
Other References:
See also references of EP 2779215A4
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: