SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Title:

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2020/021939

Kind Code:

A1

Abstract:

The purpose of the present invention is to provide technology for obtaining high resistance in a channel region of an oxide semiconductor and low resistance in a source region and a drain region of the oxide semiconductor in a thin film transistor in which an oxide semiconductor is used. This semiconductor device is provided with a thin film transistor comprising an oxide semiconductor, the oxide semiconductor comprises a channel region, a drain region, and a source region, the semiconductor device additionally comprises a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, and a gate electrode provided on the aluminum oxide film, and the aluminum oxide film comprises a region that covers neither the drain region nor the source region in a planar view.

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Inventors:

HANADA AKIHIRO (JP)
JINNAI TOSHIHIDE (JP)

Application Number:

PCT/JP2019/025099

Publication Date:

January 30, 2020

Filing Date:

June 25, 2019

Export Citation:

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Assignee:

JAPAN DISPLAY INC (JP)

International Classes:

H01L21/336; G02F1/1368; G09F9/30; H01L21/8234; H01L27/088; H01L29/786

Foreign References:

JP2017076788A	2017-04-20
JP2017076787A	2017-04-20
JP2018074076A	2018-05-10
JP2017028288A	2017-02-02