Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/005432
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a large storage capacity. The semiconductor device comprises: an oxide disposed on a substrate; a plurality of first electrical conductors on the oxide; a first insulator which is disposed on the plurality of first electrical conductors and has a plurality of openings formed overlapping a region between the plurality of first electrical conductors; a plurality of second insulators respectively disposed in the plurality of openings; a plurality of charge holding layers respectively disposed on the plurality of second insulators; a plurality of third insulators respectively disposed on the plurality of charge holding layers; and a plurality of second electrical conductors respectively disposed on the plurality of third insulators.
Inventors:
ONUKI TATSUYA (JP)
MATSUZAKI TAKANORI (JP)
YAMAZAKI SHUNPEI (JP)
MATSUZAKI TAKANORI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2020/055843
Publication Date:
January 14, 2021
Filing Date:
June 22, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8234; H01L21/336; H01L27/088; H01L27/11521; H01L27/11568; H01L29/788; H01L29/792
Foreign References:
JP2003188287A | 2003-07-04 | |||
US20100213458A1 | 2010-08-26 | |||
JP2009032804A | 2009-02-12 | |||
JP2014239202A | 2014-12-18 | |||
JP2000294660A | 2000-10-20 |
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