Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/013223
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention has: a substrate having a first main surface; an electrode provided above the first main surface; and a passivation layer covering the electrode. An opening through which a portion of the electrode is exposed is formed in the passivation layer. The passivation layer has a first surface contacting the electrode, a second surface on a reverse side of the first surface, and a third surface extending to the first surface and the second surface and configuring the opening, and in a cross-sectional view intersecting the first surface, the second surface, and the third surface, the third surface bends in a direction in which a center of a contact circle is positioned outside of the third surface when viewed from the passivation layer.
Inventors:
HARADA KAZUNORI (JP)
SAITOH YU (JP)
SAITOH YU (JP)
Application Number:
PCT/JP2022/022112
Publication Date:
February 09, 2023
Filing Date:
May 31, 2022
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12; H01L29/739
Domestic Patent References:
| WO2019208755A1 | 2019-10-31 | |||
| WO2020208706A1 | 2020-10-15 |
Foreign References:
| JP2009231321A | 2009-10-08 | |||
| JP2003188148A | 2003-07-04 | |||
| JP2019165062A | 2019-09-26 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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