Title:
SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/052630
Kind Code:
A1
Abstract:
A semiconductor device and related manufacturing methods are provided. The semiconductor device includes one interconnection structure including: a substrate; a first insulating dielectric layer underneath a lower surface of the substrate; a second insulating dielectric layer on an upper surface of the substrate; a first connecting pad disposed within the first insulating dielectric layer; a metal connection member penetrating through a portion of the second insulating dielectric layer, the substrate and a portion of the first insulating dielectric layer to connect the first connecting pad; and a second connecting pad disposed within the second insulating dielectric layer and connecting the metal connection member. The metal connection member may be a Through-Silicon Via (TSV). The device includes a confined air gap surrounding the metal connection member, which improves the performance and reliability of the device.
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Inventors:
CHANG CHIH-WEI (CN)
Application Number:
PCT/CN2019/105588
Publication Date:
March 19, 2020
Filing Date:
September 12, 2019
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/528; H01L21/768
Foreign References:
| CN102623433A | 2012-08-01 | |||
| US20180166319A1 | 2018-06-14 | |||
| CN107680953A | 2018-02-09 | |||
| CN107731744A | 2018-02-23 | |||
| CN208753310U | 2019-04-16 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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